发明名称 Magneto-resistance effect film and memory using it
摘要 <p>The magneto-resistance effect film of the present invention comprises a first magnetic layer (111) consisting of a perpendicularly magnetized film, a second magnetic layer (113) consisting of a perpendicularly magnetized film stacked above said first magnetic layer, and a non-magnetic layer (112) sandwiched between said first and second magnetic layers, wherein there is provided a first magnetic region (114) formed in granular shape between one of said first and second magnetic layers and the non-magnetic layer and having a spin polarization greater than that of the one of the first and second magnetic layers and wherein the first magnetic region is arranged to be exchange-coupled with the one of said first and second magnetic layers. <IMAGE></p>
申请公布号 EP1265249(B1) 申请公布日期 2005.11.02
申请号 EP20020012616 申请日期 2002.06.06
申请人 CANON KABUSHIKI KAISHA 发明人 IKEDA, TAKASHI
分类号 G11B5/39;G11C11/15;H01F10/16;H01F10/187;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15;G11C11/16 主分类号 G11B5/39
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