| 摘要 |
<p>In the solid-state image sensor including 4-Tr-pixels, a source follower transistor (SF-Tr), a reset transistor (RST) and a select transistor (Select) are made common between pixels (P n , P n+1 ) adjacent in the column direction, and transfer transistors (TG1 and TG2) are formed in a region which is respectively positioned on the same side with respect to the photodiodes (PD1 and PD2), and the source follower transistor (SF-Tr), the reset transistor (RST) and the select transistor (Select) made common are formed in regions positioned on the side in the row direction with respect to the photodiodes (PD1 and PD2).</p> |
