FILM FORMATION METHOD AND APPARATUS UTIZING PLASMA CVD

摘要

A film formation method utilizing plasma CVD to form a predetermined thin film on a target substrate (W) includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber (51) that accommodates the substrate (W) while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber (51). The second step is arranged to generate second plasma within the process chamber (51) while supplying the reducing gas into the process chamber (51), subsequently to the first step.