发明名称 |
Integrated passive devices and method of manufacture |
摘要 |
<p>The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.</p> |
申请公布号 |
EP1592047(A2) |
申请公布日期 |
2005.11.02 |
申请号 |
EP20050252629 |
申请日期 |
2005.04.27 |
申请人 |
SYCHIP INC. |
发明人 |
DEGANI, YINON;LAU, MAUREEN Y.;TAI, KING LIEN |
分类号 |
H01L21/02;H01L27/04;H01L21/00;H01L21/822;H01L21/8242;H01L23/14;H01L23/34;H01L27/01;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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