发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.
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申请公布号 |
US6960787(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20030631762 |
申请日期 |
2003.08.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;NAKAJIMA SETSUO;SAKAMOTO NAOYA |
分类号 |
H01L29/786;G02F1/133;G02F1/136;G02F1/1362;G02F1/1368;G09G3/32;G09G3/36;H01L21/77;H01L21/822;H01L21/8238;H01L21/84;H01L27/04;H01L27/08;H01L27/092;H01L27/12;H04N9/31;(IPC1-7):H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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