发明名称 |
Method for making damascene interconnect with bilayer capping film |
摘要 |
A method for making a damascene interconnect structure with a bi-layer capping film is provided. The damascene interconnect structure comprises a semiconductor layer and a dielectric layer disposed on the semiconductor layer. The dielectric layer has a main surface and at least one damascened recess provided on the main surface. A copper wire is embedded in the damascened recess. The copper wire has a chemical mechanical polished upper surface, which is substantially co-planar with the main surface of the dielectric layer. After polishing the upper surface of the copper wire, the upper surface is pre-treated and reduced in a conductive plasma environment at a temperature of below 300° C. A bi-layer capping film is thereafter disposed on the upper surface of the copper wire. The bi-layer capping film consists of a lower HDPCVD silicon nitride layer and an upper doped silicon carbide layer.
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申请公布号 |
US6960522(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20040708426 |
申请日期 |
2004.03.02 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN JEI-MING;CHIANG YI-FANG;LIU CHIH-CHIEN |
分类号 |
H01L21/311;H01L21/44;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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