| 摘要 |
A method of forming a memory device having a self-aligned contact is described. The method includes providing a substrate having a floating gate dielectric layer formed thereon, forming a floating poly gate layer on the floating gate dielectric layer, forming a first silicon nitride layer on the floating poly gate layer, and forming a patterned photoresist layer on the first silicon nitride layer. The method further includes etching the first silicon nitride layer and the floating poly gate layer using the patterned photoresist layer as an etch mask, forming an oxide layer over the exposed etched areas, removing the patterned photoresist layer and the first silicon nitride layer to expose the floating poly gate layer, forming poly spaces in the floating poly gate layer, and depositing a second silicon nitride layer over the poly spaces of the floating poly gate layer to form a self-aligned contact.
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