发明名称 Semiconductor circuit device
摘要 A semiconductor circuit device, in which an output device is driven by inputting a direct current voltage source having a predetermined potential difference on the high potential side relative to a system ground and a power supply having a potential varied with time relative to the system ground. The semiconductor circuit device includes a voltage conversion circuit which converts an input signal having an amplitude between the system ground and the direct current voltage source into a converted signal having an amplitude between an internal ground and an internal power supply, and outputs the converted signal. The internal ground is controlled to have a potential varied with time relative to the system ground, and the internal power supply is controlled to change according to a change of the internal ground and have the predetermined potential difference on the high potential side when the internal ground has a fixed potential. A selector circuit selects and outputs the input signal and the converted signal according to the potential of the internal ground.
申请公布号 US6960953(B2) 申请公布日期 2005.11.01
申请号 US20040836202 申请日期 2004.05.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ICHIHARA TAKASHI
分类号 G09G3/36;H03L5/00;H03L7/00;(IPC1-7):H03L5/00 主分类号 G09G3/36
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