发明名称 |
Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same |
摘要 |
A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.
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申请公布号 |
US6960507(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20040759239 |
申请日期 |
2004.01.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JI-YOUNG;PARK JIN-JUN |
分类号 |
H01L21/762;H01L21/336;H01L21/76;H01L21/8234;H01L27/088;H01L27/11;H01L29/423;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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