发明名称 Mask with extended mask clear-out window and method of dummy exposure using the same
摘要 A mask with extended mask window for forming patterns on a semiconductor substrate. The mask includes a main chip array having four sides for forming patterns of a main chip in a semiconductor substrate and a plurality of extended mask windows arranged around the main chip array. A method of dummy exposure using the mask includes providing a semiconductor substrate comprising a nitride layer with a plurality of main chip areas therein, and a plurality of unpatterned areas therein, forming a resist layer on the semiconductor substrate, providing an exposure mask comprising a main chip array and a plurality of extended mask windows, patterning the main chip areas of the semiconductor substrate using the main chip array of the exposure mask, patterning the unpatterned areas of the semiconductor substrate using the windows of the exposure mask, and removing the unexposed portions of the resist layer.
申请公布号 US6960411(B2) 申请公布日期 2005.11.01
申请号 US20020314959 申请日期 2002.12.10
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 YEN YU-LIN;CHANG CHING-YU;LIN SHUN-LI
分类号 G03F1/14;H01L21/762;(IPC1-7):G03F9/00 主分类号 G03F1/14
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