| 摘要 |
<p>Disclosed are a high breakdown voltage semiconductor device and a method of manufacturing the same. According to the invention, an insulation spacer capable of substitute-performing functions of an inter-insulation film, a contact hole and a mask, etc. by a self-alignment and simplifying a general process for manufacturing a device is newly arranged in a part of a gate electrode pattern. Thus, it is possible to naturally reduce the number of masks required for the device manufacture. Accordingly, a manufacturer can easily avoid various problems caused due to an increase of the number of masks. Further, it is possible to minimize a morphology abnormality of each unit patterns due to a miss-alignment of the mask and to effectively reduce a size of the device to be finally completed.</p> |
