发明名称 |
Method of forming a metal gate |
摘要 |
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.
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申请公布号 |
US6960515(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20010011843 |
申请日期 |
2001.12.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO MAHN-HO;KU JA-HUM;CHOI CHUL-JOON;CHO JUN-KYU;HEO SEONG-JUN |
分类号 |
H01L21/28;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/320;H01L21/31;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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