发明名称 |
Method for manufacturing a semiconductor device having an improved disposable spacer |
摘要 |
The present invention provides methods for manufacturing semiconductor devices. In one embodiment, the method includes forming a gate oxide over a substrate and a gate electrode over the gate oxide. The method also includes implanting impurities into the substrate using the gate electrode as an implant mask to form lightly-doped regions in the substrate. The method further includes forming a first spacer adjacent the gate electrode, and implanting impurities into the substrate and through a portion of the lightly-doped regions using the first spacer as an implant mask to form deep source/drain regions in the substrate. The method still further includes forming a second spacer adjacent the first spacer, implanting impurities into the substrate using the second spacer as an implant mask to form a graded source/drain region in the substrate, and removing the second spacer. Also disclosed is a semiconductor device constructed using the techniques disclosed herein.
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申请公布号 |
US6960512(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20030602241 |
申请日期 |
2003.06.24 |
申请人 |
TAIWAIN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG SHUI-MING;FUNG KA-HING;WANG YIN-PIN;CHENG KUAN-LUN;HUANG HUAN-TSUNG |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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