A CMOS DEVICE ON ULTRATHIN SOI WITH A DEPOSITED RAISED SOURCE/DRAIN, AND A METHOD OF MANUFACTURE,申请号SG20030007829-传众专利搜索

发明名称	A CMOS DEVICE ON ULTRATHIN SOI WITH A DEPOSITED RAISED SOURCE/DRAIN, AND A METHOD OF MANUFACTURE
摘要
申请公布号	SG115598(A1)	申请公布日期	2005.10.28
申请号	SG20030007829	申请日期	2003.12.26
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	HEEMYONG PARK;LEE, BYOUNG, H.;AGNELLO, PAUL, D.;SCHEPIS, DOMINIC, J.;SHAHIDI, GHAVAM, G.
分类号	H01L21/28;H01L21/00;H01L21/336;H01L21/76;H01L21/762;H01L21/8238;H01L21/84;H01L27/01;H01L27/08;H01L27/092;H01L27/12;H01L29/417;H01L29/423;H01L29/49;H01L29/74;H01L29/76;H01L29/78;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76;H01L21/823	主分类号	H01L21/28
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