| 摘要 |
An apparatus and method of treating multiple wafers to reduce the density of impurities as well as to improve the uniformity of substrate electrical characteristics without any thermal stress. The wafers are chemically treated, and heat treated in a sealed reaction tube under arsenic overpressure with a controlled thermal profile to heat the wafers. The thermal profile controls temperature of different zones inside of a furnace containing the sealed reaction tube. Impurities of the wafers are dissolved, and are out-diffused from the inner portions to the outer portions of the wafers. |
