| 摘要 |
A method of forming fluid handling slots in a semiconductor substrate having a thickness defined by a first side and a second side is provided. The method comprises ultrasonic grinding, utilizing an abrasive material, into the semiconductor substrate from a first side to form a first trench, and removing semiconductor substrate material from the backside to form a second trench, wherein at least a portion of the first and second trenches intersect to form a feature through the semiconductor substrate.
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