| 摘要 |
The invention provides a thin-film semiconductor device, which reduces or prevents an undercut from being produced below a thin film when a pattern including an intersection is formed in the thin film. The invention also provides a method of manufacturing the same. A semiconductor film has a pattern including a bent shape or a projected shape. One line segment and another line segment, which define an intersection of the bent shape or the projected shape and which are consecutive, have an additional line segment interposed between ends of the one line segment and the other line segment form a smooth intersection in which each of the angles formed between the additional line segment and the one line segment and between the additional line segment and the other line segment is greater than 90� and less than 180�. |
