| 发明名称 |
BOND PAD SCHEME FOR CU PROCESS |
| 摘要 |
A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes. |
| 申请公布号 |
SG115593(A1) |
申请公布日期 |
2005.10.28 |
| 申请号 |
SG20030007202 |
申请日期 |
2003.12.04 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIA-HUNG LAI;JIUNN-JYI LIN;TZONG-SHENG CHANG;MIN CAO;HUAN-CHI TSENG;YU-HUA LEE;CHIN-TIEN YANG |
| 分类号 |
H01L21/28;H01L21/44;H01L21/60;H01L21/768;H01L23/48;H01L23/485;H01L23/52;H01L29/40;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
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