| 摘要 |
The realization of a semiconductor color image sensor cell incorporating a metal layer where a connection contact (3) is defined, an anti-reflection layer (5) covering the metal layer and a passivation layer (1) including the assembly, comprises: (a) engraving the passivation layer with a stoppage on the anti-reflection layer in order to form a hole for the opening of the connection contact; (b) forming at least one color filter element (6, 7, 8) on a region of the passivation layer, the anti-reflection layer thus serving as a protective layer for the surface of the connection contact; (c) depositing a planation resin layer (9) to cover the color filter elements; (d) forming micro-lenses (10) on the planation resin layer respectively above the color filter elements; and (e) engraving the anti-reflection layer to open the connection contact. The image sensor cell incorporates three color filters that are respectively green, blue and red. |
