发明名称 |
MULTI-STAGE PER CELL MAGNETORESISTIVE RANDOM ACCESS MEMORY |
摘要 |
A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer as a pinned magnetic layer and a read layer as an unpinned layer. The unpinned layer has a higher Curie point than the pinned layer. The pinned layer in an individual cell is heated to near its Curie point and a bit line current and a word line current is used to align the magnetization vector of the recording layer at a plurality of angles relative to the magnetization vector of the read layer. |
申请公布号 |
SG115462(A1) |
申请公布日期 |
2005.10.28 |
申请号 |
SG20020001415 |
申请日期 |
2002.03.12 |
申请人 |
DATA STORAGE INSTITUTE |
发明人 |
YUAN KAI ZHENG;YIHONG WU;ZAI BING GUO;JIN JUN QIU;KE BIN LI;GU CHANG HAN |
分类号 |
G11C11/15;G11C11/56;H01F10/32;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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