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发明名称
STRAINED-CHANNEL TRANSISTOR STRUCTURE WITH LATTICE-MISMATCHED ZONE AND FABRICATION METHOD THEREOF
摘要
申请公布号
SG115550(A1)
申请公布日期
2005.10.28
申请号
SG20030003901
申请日期
2003.06.07
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人
LIN CHUN CHIEH;LEE WEN-CHIN;HU CHENMING;YEO YEE-CHIA
分类号
H01L21/20;H01L21/28;H01L21/336;H01L29/51;H01L29/78;(IPC1-7):H01L21/00
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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