| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which suppresses a progression of a corrosion of a wiring including a copper. SOLUTION: The method for manufacturing the semiconductor device comprises steps of: forming a lower wiring 3 having a top face 3a and including the copper; forming a diffusion preventing film 4 so as to cover the top face 3a; forming a contact hole 8 reaching the top face 3a in the diffusion preventing film 4 by etching processing a part of the diffusion preventing film 4 with the use of an etchant including a fluorocarbon system gas; and plasma processing the lower wiring 3 exposing from the contact hole 8 with the use of a gas including at least one type selected from a group comprising nitrogen, argon, and hydrogen after the step of forming the contact hole 8. COPYRIGHT: (C)2006,JPO&NCIPI
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