发明名称 |
Cleaning solution and manufacturing method for semiconductor device |
摘要 |
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
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申请公布号 |
US2005236362(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20050115275 |
申请日期 |
2005.04.27 |
申请人 |
KANTO KAGAKU KABUSHIKI KAISHA |
发明人 |
AOKI HIDEMITSU;SUZUKI TATSUYA;OHWADA TAKUO;IKEGAMI KAORU;ISHIKAWA NORIO |
分类号 |
H01L21/3065;B44C1/22;C09K13/00;C11D7/08;C11D7/10;C11D7/26;C11D7/32;C11D11/00;H01L21/02;H01L21/302;H01L21/304;(IPC1-7):C09K13/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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