发明名称 NITRIDE LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emitting diode device having excellent thermal stability and a long lifetime. <P>SOLUTION: A nitride light emitting diode and its manufacturing method are explained. The nitride light emitting diode has a P-type electrode, an N-type electrode, and a P-type transparent contact layer formed of a titanium nitride based material. The titanium nitride based material has not only excellent ohmic contact properties and transparency, but also excellent thermal stability. Thus, the thermal stability of the light emitting diode can be effectively improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005303252(A) 申请公布日期 2005.10.27
申请号 JP20040239293 申请日期 2004.08.19
申请人 EPITECH CORP LTD;CHEN SHI-MING 发明人 CHU CHAN-SHIN;YU KOU-FUI;RU CHI-MEN;RI SHUE-RIN;CHEN SHI-MING
分类号 H01L33/06;H01L33/32;H01L33/40 主分类号 H01L33/06
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