发明名称 NONVOLATILE STORAGE DEVICE, SEMICONDUCTOR STORAGE DEVICE, AND STORAGE SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To allow specifications necessary for access of an access subject to be acquired without interpreting information specific to an LSI vendor, like a device ID by using a correspondence table. <P>SOLUTION: A plurality of memory cells capable of nonvolatile storage and a control circuit (10) for controlling information read, erase, and write of the plurality of memory cells. The control circuit reads out information from a part of the plurality of memory cells in accordance with detection of a voltage supplied from the outside and outputs the read information in accordance with a read control signal (/RE) supplied from the outside. The read information includes information indicating specifications of a nonvolatile storage device, and the nonvolatile storage device is capable of outputting information indicating specifications of the nonvolatile storage device in a format according with a semiconductor processing apparatus connected to the outside. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005301831(A) 申请公布日期 2005.10.27
申请号 JP20040119407 申请日期 2004.04.14
申请人 RENESAS TECHNOLOGY CORP 发明人 OBA ATSUSHI;NAKAMURA TAKESHI
分类号 G06K19/07 主分类号 G06K19/07
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