| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an imaging element including a photoelectric conversion film having a high efficiency. <P>SOLUTION: The imaging element includes, between a pair of electrodes, a photoelectric conversion film (a photosensitive layer) having a bulk hetero-junction structure layer as an intermediate layer, or a photoelectric conversion film having a structure comprising two or more repeated structures of pn junction layers respectively formed of p-type and n-type semiconductor layers. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
