| 摘要 |
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiO<SUB>n </SUB>and RSiO<SUB>n</SUB>, where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH)<SUB>x </SUB>and (CH<SUB>3</SUB>)<SUB>y</SUB>Si(OH)<SUB>4-y </SUB>is formed to partially fill the trench. At least some of the Si(OH), if present is converted to SiO<SUB>2 </SUB>and at least some of (CH<SUB>3</SUB>)<SUB>y</SUB>Si(OH)<SUB>4-y </SUB>if present is converted to (CH<SUB>3</SUB>)<SUB>x</SUB>SiO<SUB>2-x</SUB>. Next, a layer of an electrically insulative material is formed to fill the trench.
|
