| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a wiring pattern whose wiring width and wiring interval are small almost to resolution limits of an exposure device by eliminating influence of proximity effect and micro-loading effect and suppressing resist fall. <P>SOLUTION: A semiconductor device which has a wiring pattern, including a main wire 111 and dummy wires 211 to 216 formed in an insulating film on a semiconductor substrate has the main wire 111 having a specified wire length L1 and the plurality of dummy wires arranged along the wire width W1 of the main wire 111, respective dummy wire arrays being formed by arranging the plurality of dummy wires 211 to 216 which have a wire width W2 of 0.5 to 2 time as large as the wire width W1 of the main wire 311 and have a wire length L2 of ≤50 μm along the wire length L1 of the main wire 111. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
