| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of enhancing yield while reducing the cost, its fabrication process, an optical transmission module employing the compound semiconductor device, and an optical disc drive employing the compound semiconductor device. SOLUTION: On a GaAs substrate 51, GaAs buffer layer 52 to InGaAsP etching stop layer 59, an AlGaAs second upper clad layer 60, a GaAs first cap layer 61 and a GaAs second cap layer 62 are grown epitaxially and then etched with mixture aqueous solution of sulfric acid and hydrogen peroxide water (volume mixing ratio=sulfric acid: hydrogen peroxide water: water=1:8:50) to form a mesa stripe part 65a. A p-electrode 63 is formed on the entire surface and an n-electrode 64 is formed on the rear surface of the GaAs substrate 51. The p-electrode 63 is subjected to Schottky junction at the mesa stripe side part 65b and to ohmic bonding at the mesa stripe part 65a so that a current flows only to the mesa stripe part 65a. Since epitaxial growth is required only once for fabricating a semiconductor laser, fabrication process and cost can be reduced sharply. COPYRIGHT: (C)2006,JPO&NCIPI
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