发明名称 Magnetic memory device structure
摘要 Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.
申请公布号 US2005237792(A1) 申请公布日期 2005.10.27
申请号 US20050133518 申请日期 2005.05.19
申请人 发明人 JOHNSON MARK B.
分类号 G01R33/06;G11B5/37;G11C7/00;G11C11/00;G11C11/16;G11C11/18;G11C11/56;H01L27/22;H01L29/66;H01L43/06;H03K19/18;(IPC1-7):G11C11/00 主分类号 G01R33/06
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