| 摘要 |
PROBLEM TO BE SOLVED: To provide low dielectric constant insulating materials for electrical isolation in high-density ICs. SOLUTION: The method of this invention is to form electrical isolation between dielectric elements in an IC, which includes providing a substrate with ICs partially manufactured, forming a layer on the substrate by a reaction of an organosilane gas source and oxidant, the formed layer principally consisting of silicon hydroxide and containing a carbon atom, and plasma-treating silicon hydroxide without forming a layer on the foregoing layer during the plasma-treatment, thereby converting the silicon hydroxide layer into lower dielectric constant insulating materials. COPYRIGHT: (C)2006,JPO&NCIPI
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