| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric film that has an excellent close-contact property and can realize a stable transverse mode characteristic to obtain a desired output characteristic. SOLUTION: The semiconductor laser device has an MQW active layer 6, a p-type clad layer 8 formed on the MQW active layer 6 having a ridge portion 8a and having a dielectric constant smaller than the MQW active layer 6, a first dielectric film 11 formed at least in the side region of the ridge portion 8a in the p-type clad layer, a second dielectric film 12 and a third dielectric film. COPYRIGHT: (C)2006,JPO&NCIPI
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