| 摘要 |
PROBLEM TO BE SOLVED: To maintain the perpendicularity of ridge sides, even when ridges are formed by using dry etching and wet etching at the same time, thereby improving element properties. SOLUTION: On an etching stopper layer 6, a p-type clad layer 13, contact layers 14 and 15, and an SiO<SB>2</SB>layer 16 are formed. By dry etching, the p-type clad layer 13 and the contact layers 14 and 15 are etched with the SiO<SB>2</SB>layer 16 as a mask to form a ridge 7 with a perpendicular or roughly perpendicular shaped side. Then, a resist 18 is applied in such a manner as to cover the ridge 7, and a portion except the ridge 7 of an Si based compound 17 on the surface of an element is removed by wet etching with the resist 18 as an etching barrier. Subsequently, the p-type clad layer 13 except the ridge 7 is removed to the etching stopper layer 6 of the lower layer by wet etching. After that, the resist 18 is stripped, and the Si based compound 17 on the surface of the ridge 7 is removed. COPYRIGHT: (C)2006,JPO&NCIPI
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