发明名称 MAGNETORESISTANCE EFFECT FILM AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce processing time of an ion milling process of a magnetoresistance effect film for use in a magnetoresistance effect element, thereby improve resolution of a lead element. SOLUTION: In a method for manufacturing a magnetoresistance effect film having a specular layer 2 and a cap layer 1 formed as protection films for a magnetic layer, a metal material to be formed into the specular layer is deposited on the magnetic layer, then the specular layer 2 is formed by depositing the metal material, and then the same metal material as in the specular layer is deposited on the specular layer 2 as the cap layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005303205(A) 申请公布日期 2005.10.27
申请号 JP20040120696 申请日期 2004.04.15
申请人 FUJITSU LTD 发明人 KAWAI KENICHI
分类号 H01F10/32;G01R33/09;G11B5/127;G11B5/33;G11B5/39;H01F41/32;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 H01F10/32
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