SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which characteristics of both a current amplification factor and an early voltage can be improved, so that the current amplification factor can be easily controlled. SOLUTION: An emitter diffusion layer 5 is formed with a polycrystal silicon emitter layer 4 as a diffusion source, and the impurity concentration of the polycrystal silicon emitter layer 4 is higher than that on the surface of the emitter diffusion layer 5. Therefore, the emitter diffusion layer 5 is a shallow junction and the impurity concentration of an emitter becomes high, thereby realizing a high-performance semiconductor device which simultaneously obtains a high current amplification factor without reducing an early voltage or emitter-collector voltage resistance. COPYRIGHT: (C)2006,JPO&NCIPI