SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for a semiconductor device having a reducible leakage current, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The substrate processing apparatus has a processing chamber for accommodating a substrate therein and a means for heating the substrate. At least, two gases are alternately supplied into the processing chamber to form a desired film on the surface of the substrate. At least, one of the two gases is supplied into the processing chamber even after a reaction between one gas and the surface of the substrate reaches its saturation. COPYRIGHT: (C)2006,JPO&NCIPI