| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device with which a trench of a desired size can be formed by in-situ-measuring (in site measuring) the depth of the trench during the etching processing of a wafer without depending on the depth, and controlling the depth of the trench at every processing wafer. SOLUTION: At the time of etching the Si wafer 10 in an etching chamber 2 by using SF<SB>6</SB>and the like, an emission spectrum detector 6 detects emission spectral intensity of F in plasma through a window 5. When F is consumed for Si etching in a trench forming stage, detected emission spectral intensity of F becomes smaller compared to a case when F is not consumed for Si etching. Thus, the depth of the trench in the Si wafer 10 is obtained from detected emission spectral intensity of F by using a relation of them. Timing of etching stop is decided. Thus, the trench of the desired size can be formed at every wafer even if the trench is deep and an aspect ratio is large. COPYRIGHT: (C)2006,JPO&NCIPI
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