| 发明名称 |
Memory cell production method for a non-volatile memory cell has a solid-state electrolyte area as a memory element activated by building in a fundamental rule |
| 摘要 |
<p>A geometrical shape used for building in a fundamental rule to activate a solid-state electrolyte (16) produces a geometrical shape/structure for a memory element (11) and/or for an activated area in the solid-state electrolyte.</p> |
| 申请公布号 |
DE102004014965(A1) |
申请公布日期 |
2005.10.27 |
| 申请号 |
DE20041014965 |
申请日期 |
2004.03.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PINNOW, CAY-UWE;HAPP, THOMAS |
| 分类号 |
G11C16/00;H01L21/8239;H01L45/00;(IPC1-7):H01L21/823 |
主分类号 |
G11C16/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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