| 摘要 |
PROBLEM TO BE SOLVED: To inspect sheet resistance without requiring penetration to a semiconductor material or a film, preferably, to nondestructively inspect a wafer or the semiconductor material of the film formed on the wafer. SOLUTION: The sheet resistance in the wafer or a sample 4 can be inspected without penetrating a surface 18 and damaging the surface 18 by allowing a plurality of probes 10, 12 that do not form any oxides or form a conductive oxide and are arranged at an interval to come into contact with the surface 18 of the wafer 4. And electrostimulation is applied to the wafer 4 via at least one of the probes 10, 12, and the electric reaction of the semiconductor material to the electrostimulation is detected via at least one of the probes 10, 12. By the measured reaction and applied electrostimulation, at least one electric characteristic in the wafer 4 can be determined. COPYRIGHT: (C)2006,JPO&NCIPI
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