发明名称 |
Emitter structure with a protected gate electrode for an electron-emitting device |
摘要 |
A cathode structure of a field emission device includes a gate electrode that is protected by a passivation layer. In one method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that the passivation layer overhangs the gate layer, which overhangs an insulating layer. When used in a display system, the gate layer is exposed to an emitter electrode but shielded from an anode.
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申请公布号 |
US2005236963(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20050107407 |
申请日期 |
2005.04.14 |
申请人 |
KANG SUNG G;BAE WOO K;SON JONG W;CHANG CHUL H;KIM JUNG J |
发明人 |
KANG SUNG G.;BAE WOO K.;SON JONG W.;CHANG CHUL H.;KIM JUNG J. |
分类号 |
H01J1/02;H01J1/62;H01J3/02;H01J9/02;H01J29/06;H01J63/04;(IPC1-7):H01J1/62 |
主分类号 |
H01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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