发明名称 |
Nitride semiconductor device and manufacturing method thereof |
摘要 |
A nitride semiconductor device including an ohmic electrode with low contact resistance and manufacturing method thereof including a first nitride semiconductor layer made of a III-V group nitride semiconductor layer deposited on a substrate, a second nitride semiconductor layer including the III-V group nitride semiconductor layer whose film formation temperature is lower than that of the first nitride semiconductor layer and being deposited on the first nitride semiconductor layer and not including aluminum. An ohmic electrode is then formed through forming a metal pattern making ohmic contact on the second nitride semiconductor layer being unprocessed crystallinity with minute grains, and then heat treating the metal pattern.
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申请公布号 |
US2005236646(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20050110721 |
申请日期 |
2005.04.21 |
申请人 |
WAKI EIJI;NAKAGAWA ATSUSHI |
发明人 |
WAKI EIJI;NAKAGAWA ATSUSHI |
分类号 |
H01L29/417;H01L21/285;H01L21/338;H01L29/20;H01L29/45;H01L29/778;H01L29/812;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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