发明名称 |
Jfet charge control device for an imager pixel |
摘要 |
A pixel cell that utilizes a JFET transistor, instead of a CMOS transistor, linked to each pixel's photosensor as an anti-blooming and/or transfer transistor to provide an overflow path for electrons during charge integration. Using a JFET transistor reduces charge uncertainty and fixed pattern noise in the imaging system.
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申请公布号 |
US2005237404(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20040832373 |
申请日期 |
2004.04.27 |
申请人 |
JERDEV DMITRI;AGRANOV GENNADIY A |
发明人 |
JERDEV DMITRI;AGRANOV GENNADIY A. |
分类号 |
H04N3/14;H04N5/365;H04N5/3745;(IPC1-7):H04N3/14 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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