发明名称 Jfet charge control device for an imager pixel
摘要 A pixel cell that utilizes a JFET transistor, instead of a CMOS transistor, linked to each pixel's photosensor as an anti-blooming and/or transfer transistor to provide an overflow path for electrons during charge integration. Using a JFET transistor reduces charge uncertainty and fixed pattern noise in the imaging system.
申请公布号 US2005237404(A1) 申请公布日期 2005.10.27
申请号 US20040832373 申请日期 2004.04.27
申请人 JERDEV DMITRI;AGRANOV GENNADIY A 发明人 JERDEV DMITRI;AGRANOV GENNADIY A.
分类号 H04N3/14;H04N5/365;H04N5/3745;(IPC1-7):H04N3/14 主分类号 H04N3/14
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