GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, ITS MANUFACTURING METHOD, AND LED LAMP

摘要

PROBLEM TO BE SOLVED: To improve the productivity of a group III nitride semiconductor light emitting element when the element is mounted while the mechanical supporting force held by a substrate is held.

SOLUTION: The group III nitride semiconductor light emitting element comprises a laminated structure 11 formed by laminating at least two group III nitride semiconductor layers 104 and 106 having mutually different electric conduction types and a light emitting layer 105 consisting of a group III nitride semiconductor provided in between the layers 104 and 106. On the uppermost surface of the light emitting element on the side opposite to a crystalline substrate 100 used for providing the laminated structure 11, a plate-shaped body 111 composed of a material which is different from that of the crystalline substrate 100 is provided, and the crystalline substrate 100 is removed.

COPYRIGHT: (C)2006,JPO&NCIPI