| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel etching method which can have a high bonding force to an underlying film in a central region, and can prevent peel-off of an organic mask by etching the underlying film and can control and adjust the taper angle of an etched underlying film pattern in a wide range freely and at a high accuracy, using the organic mask adjusted to be low in its adhesion to the underlying film in a peripheral region. SOLUTION: Through a step of contacting an organic pattern with an organic solvent, the bonding force of the bottom of an organic-solvent penetrated region is reduced in the peripheral region of the organic pattern to the underlying film. Thereafter, heat treatment for adjustment of the bonding force causes formation of the organic pattern having an adjusted bonding force of the peripheral region. isotropic etching using the organic pattern causes adjustment of the taper angle of the etched underlying film at a desired value. Since the heat treatment causes adjustment of the bonding force, the taper angle of the etched underlying film pattern can be adjusted. COPYRIGHT: (C)2006,JPO&NCIPI |
