| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface light emitting semiconductor laser element with a long service life and uniform light output characteristics. SOLUTION: A silicon oxynitride film 34 serving as an inorganic insulating film is laminated to continuously cover edges of an upper surface of a mesa structure and side surfaces of the same including an active region 24 formed on a lower DBR 16 of a first conductivity type formed on a first principal surface of an n-type GaAs substrate 12, an upper DBR 26 of a second conductivity type containing an AlAs layer 32 in its lowermost layer, and a p-type GaAs contact layer 28. The side faces of the mesa structure are continuously linear. COPYRIGHT: (C)2006,JPO&NCIPI
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