| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor laser equipment that suppresses distortion in the luminescent layer and improves the radiation characteristic. SOLUTION: This semiconductor laser equipment is provided with an n-GaAs substrate 2A, a luminescent layer 2B formed on the n-GaAs substrate 2A, a first electrode 1 (upper electrode) formed on the luminescent layer 2B, a concave 20A formed on the rear of the n-GaAs substrate 2A with a distance from the luminescent layer 2B, a second electrode 5 (lower electrode) formed on the rear of the n-GaAs substrate 2A from the bottom of the concave 20A, and a lid 4 attached to the rear of the n-GaAs substrate 2A to form a passage 3 for coolant between the concave 20A and the lid. The ratio of height (h) from the bottom of the concave 20A to the lower side of the first electrode 1 to the width (W1) of the passage 3 is approximately 0.11 or more but less than or equal to 2.4. COPYRIGHT: (C)2006,JPO&NCIPI
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