| 摘要 |
A circuit arrangement is described having a terminal ( 1 ) for a high-frequency signal, having at least two additional signal leads ( 21 a, 21 b, 21 c, 22 a, 22 b), having a switching unit ( 3 ) for connecting the terminal ( 1 ) to a signal lead ( 21 a, 21 b, 21 c, 22 a, 22 b), having a primary protection device ( 41 ) against electrostatic discharges, which is connected between the terminal ( 1 ) and the switching unit ( 3 ), the protection device ( 41 ) containing a first voltage limitation element ( 51 ), which diverts voltage pulses that exceed a switching voltage of 200 V to a reference potential ( 7 ). The use of a gallium arsenide double diode makes it possible to attain the advantage of a low insertion loss coupled with a low switching voltage.
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