发明名称 LIGHT GUIDE TYPE SENSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To construct a smaller-sized analysis system by using a total-reflection absorption spectroscopy. SOLUTION: A detection domain 130 is provided adjacently to a mode field size conversion domain 120. A light guide comprising a silicon thin-line core 105 is constructed in the detection domain 130. A thin silicon oxide film 106 of a film thickness on the order of 20 to 30 nm is formed on an upper surface of the thin-line core 105. The thin-line core 105 has a cross section size of 500 nm in width and 150 nm in height. The thin-line core 105 is disposed on an embedded oxide layer 112 of an SOI substrate in the detection domain 130. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005300212(A) 申请公布日期 2005.10.27
申请号 JP20040113120 申请日期 2004.04.07
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TSUCHIZAWA YASUSHI;TAKAHASHI MITSUTOSHI;FUKUDA HIROSHI;YAMADA KOJI;WATANABE TOSHIBUMI;TAKAHASHI JUNICHI;ITABASHI SEIICHI
分类号 G01N21/27;G02B6/122;G02B6/13;(IPC1-7):G01N21/27 主分类号 G01N21/27
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