发明名称 |
LIGHT GUIDE TYPE SENSOR AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To construct a smaller-sized analysis system by using a total-reflection absorption spectroscopy. SOLUTION: A detection domain 130 is provided adjacently to a mode field size conversion domain 120. A light guide comprising a silicon thin-line core 105 is constructed in the detection domain 130. A thin silicon oxide film 106 of a film thickness on the order of 20 to 30 nm is formed on an upper surface of the thin-line core 105. The thin-line core 105 has a cross section size of 500 nm in width and 150 nm in height. The thin-line core 105 is disposed on an embedded oxide layer 112 of an SOI substrate in the detection domain 130. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005300212(A) |
申请公布日期 |
2005.10.27 |
申请号 |
JP20040113120 |
申请日期 |
2004.04.07 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TSUCHIZAWA YASUSHI;TAKAHASHI MITSUTOSHI;FUKUDA HIROSHI;YAMADA KOJI;WATANABE TOSHIBUMI;TAKAHASHI JUNICHI;ITABASHI SEIICHI |
分类号 |
G01N21/27;G02B6/122;G02B6/13;(IPC1-7):G01N21/27 |
主分类号 |
G01N21/27 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|