| 摘要 |
A method for manufacturing a semiconductor device comprises the steps of: giving chemical mechanical polishing to a polishee layer, provided on a semiconductor substrate, by contacting a conditioner against the surface of a polishing pad while contacting the semiconductor substrate, having the polishee layer, against the surface of the polishing pad; cleaning the polishing pad, after giving chemical mechanical polishing to the polishee layer, by supplying a cleaning liquid onto the polishing pad while contacting the conditioner against the polishing pad; cleaning the surface of the semiconductor substrate by contacting the semiconductor substrate 1 against the cleaned polishing pad while supplying the cleaning liquid onto the polishing pad; and giving finish-cleaning to the surface of the semiconductor substrate by contacting the semiconductor substrate against the cleaned polishing pad while supplying the cleaning liquid onto the polishing pad. |
