发明名称 |
Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer |
摘要 |
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.
|
申请公布号 |
US2005239288(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20040910182 |
申请日期 |
2004.08.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
PENG CHAO-HSIEN;LIN JING-CHENG;HSIEH CHING-HUA;SHUE SHAU-LIN |
分类号 |
H01L21/306;H01L21/311;H01L21/3213;H01L21/44;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|